Cross Reference

Motor Drive

MOSFETs, gate drivers, and protection for BLDC, stepper, and servo motor drives

Motor-drive applications stress every part of the power chain: high currents through low-Rds MOSFETs, fast switching transitions that demand robust gate drive, and reverse-EMF events that hammer the protection devices. Magnias supplies discrete MOSFETs (30V to 200V class), the MGD55xxD isolated gate driver (5.7 kVRMS), Schottky diodes, ESD/TVS protection, and small-signal ICs for BLDC, brushed-DC, stepper, and servo motor systems. In PDFN5060-8L and PDFN3333-8L packages we offer Rds(on) from 0.55 mΩ typ (PMS0R5N04TG), and TOLL-8L parts from 40V to 150V reach 0.6 mΩ for high-current drives, letting designers right-size for current, switching loss, and PCB area.

Application areas

BLDC three-phase inverter

  • 100V / 150V N-Channel MOSFET ×6 (low Rds(on) for low-loss commutation)
  • Three-phase bridge MOSFET in one package (PMM6N04-3P5, 40V)
  • Isolated gate driver, 5.7 kVRMS, for VFD / inverter stages (MGD55xxD)
  • Bootstrap Schottky diodes
  • Gate-source ESD protection

Brushed-DC H-bridge

  • 30V / 60V P+N MOSFET pairs
  • Low-IQ LDO (3.3V control rail)
  • TVS for back-EMF clamping
  • Open-drain INT signaling

Stepper motor driver

  • 40V N-Channel MOSFET (logic-level Vth)
  • Comparator (over-current sense)
  • ESD on step/dir inputs
  • Buck for VCC regulation

Servo / robotic actuators

  • 60V / 100V MOSFET (PWM stage)
  • Push-pull level shifter (encoder interface)
  • Low-noise LDO for the encoder supply (PSR9032)
  • Sensor signal-path ESD

Browse Magnias products for this segment

Industrial motor-drive customers often require AEC-Q101 parts for automotive crossover applications; AEC-Q101 (-A) MOSFETs run up to 100V. Contact our FAE team for qualification details on specific MOSFET part numbers.

Request samples or motor-drive design support

Designing a BLDC, servo, or stepper motor drive? Share your motor specs and target current: our FAE team replies within one business day with the right MOSFETs, gate-drive bias rail, and protection mix, plus sample availability.