MOSFET
PMS3439DTW
MOSFET
PMS3439DTW 为MOSFET，采用 SOT363 封装。
SOT363 符合 RoHS 无卤 现货供应
封装, SOT363
产品特性
- N+P Channel: VDS = 20V/-20V, ID = 0.8A/-0.8A
- N-Channel: RDS(on) = 175mΩ @ VGS = 4.5V
- P-Channel: RDS(on) = 430mΩ @ VGS = -4.5V
- Enhancement Mode
- High Density Cell Design for Low RDS(on)
- ESD Protected Gate
- Epoxy Meets UL 94 V-0 Flammability Rating
应用领域
- Small Signal Switching
- Load Switching
- Power Switching Application
关键规格
Product Name
PMS3439DTW
Package
SOT363
Category
N+P
VDS
(V)
20/-20
ID
(A)
0.8/-0.8
RDS(ON)@VG=10V
Typ. (mΩ)
-/-
RDS(ON)@VG=4.5V
Typ. (mΩ)
175/430
VGS(TH)
Min. (V)
0.35/-0.35